Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Reference21 articles.
1. Anelli G, Campbell M, Delmastro M, Faccio F, Floria S, Giraldo A, Heijne E, Jarron P, Kloukinas K, Marchioro A, Moreira P, Snoeys W (1999) Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects. IEEE Trans Nucl Sci 46 (6):1690–1696
2. Anelli G (2000) Conception et caractérisation de circuits intégrés résistants aux radiations pour les détecteurs de particules du LHC en technologies CMOS submicroniques profondes, France, thèse de doctorat dirigée par Velazco Raoul microélectronique Grenoble INPG 2000
3. Chen L, Gingrich D (2005) Study of N-channel MOSFETs with an enclosed-gate layout in a 0.18 μm CMOS technology. IEEE Trans Nucl Sci 52(4):861–867
4. Flores-Nigaglioni A, Contreras-Ospino BM, Ducoudray GO, Palomera R (2015) Comparative analysis and parameter extraction automation of annular MOSFETs. In: Proceedings of IEEE 58th international midwest symposium on circuits and systems (MWSCAS), pp 1–4
5. Giraldo A, Paccagnella A, Minzoni A (2000) Aspect ratio calculation in n-channel MOSFETs with a gate-enclosed layout. Solid-State Electron 44(6):981–989
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