Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18 μm CMOS technology

Abstract

Abstract Circuits for CMOS two-dimensional (2-D) array data transfer are indispensable for applications such as space and nuclear fields. Issues include being operated with higher speed, lower power, fewer size penalties, and radiation hardness. To meet these requirements, two kinds of CMOS 2-D array data transfer circuits, such as a shift register type and a memory access type, are proposed and fabricated by the standard 0.18 μm CMOS process technology. In both types, 16 μm pitch, 8 × 128 array data transfer operations were realized with a data rate of more than 1 Gb/s. Furthermore, we conducted 60Co γ-ray irradiation experiments on those circuits. The current consumption ratio of the shift register type to the memory access type ranges from 150 to 200% as the dosage increases. The result indicates that the memory access type has better radiation hardness at 1 Gb/s than that of the shift register type.