Artificial epitaxy (diataxy) of silicon and germanium-Reference-Cited by-同舟云学术

Artificial epitaxy (diataxy) of silicon and germanium

Published:1979-10 Issue:1-3 Volume:47 Page:167-183
ISSN:0001-6705
Container-title:Acta Physica Academiae Scientiarum Hungaricae
language:en
Short-container-title:Acta Physica

Author:

Klykov V. I.,Sheftal N. N.,Hartmann E.

Publisher

Springer Science and Business Media LLC

Subject

Nuclear and High Energy Physics

Link

http://link.springer.com/content/pdf/10.1007/BF03156522.pdf

Reference12 articles.

1. N. N. Sheftal, in: Growth of Crystals, Vol.10, Nauka, 1974. p. 195 (in Russian); Consultants Bureau, New York, 1976, p. 185.

2. N. N. Sheftal andA. N. Buzynin, Vestnik MGU, ser. geol., N 3, 102, 1972.

3. V. I. Klykov, N. N. Sheftal andN. P. Kokorish. Manuscript depon. in VINITI N 642-76 from 1.03.76.

4. V. I. Klykov, R. N. Sheftal, andN. N. Sheftal, in: Process of Real Crystal Formation, Nauka, Moscow, 1977, p. 144.

5. N. N. Sheftal andV. I. Klykov, in: The Mechanism and Kinetics of Crystallization, Vol. 1, Thilisi, 1977, 31 (Abstracts for 5th Conference on Crystal Growth).

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