Low-temperature electrical characteristics of the Au/Si interface-Reference-Cited by-同舟云学术

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Low-temperature electrical characteristics of the Au/Si interface

Published:1987-04 Issue:4 Volume:18 Page:701-705
ISSN:1073-5623
Container-title:Metallurgical and Materials Transactions A
language:en
Short-container-title:MTA

Author:

Tran A.,Yang C. Y.,Gao M.,Kim N.,Cooley R. F.

Publisher

Springer Science and Business Media LLC

Subject

Metals and Alloys,Mechanics of Materials,Condensed Matter Physics

Link

http://link.springer.com/content/pdf/10.1007/BF02649486.pdf

Reference13 articles.

1. J. W. Mayer:Solid State Technology, 1984, vol. 27, pp. 149–57.

2. L. Valero:Semiconductor International, May 1984, pp. 236–41.

3. P. H. Singer:Semiconductor International, December 1983, pp. 62–65.

4. E. H. Rhoderick:J. Phys. D, 1970, vol. 3, pp. 1153–67.

5. A. M. Goodman:J. Appl. Phys., 1963, vol. 34, pp. 329–38.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New Aspect of Eutectic Bonding for Gold Soldering;Diffusion Bonding 2;1991

2. Wafer back metallization for semiconductor packaging;Thin Solid Films;1987-10

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