Novel Deposition Methods
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Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-0-387-84874-7_11.pdf
Reference87 articles.
1. Dobkin, D.M., Zuraw, M.K.: Principles of chemical vapor deposition. Kluwer, Dordrecht (2003)
2. Pierson, H.O.: Handbook of chemical vapor phase deposition (CVD). Noyes, Park Ridge (1992)
3. Cho, S.L., Yi, J.H., Ha, Y.H., Kuh, B.J., Lee, C.M., Park, J.H., Nam, S.D., Horii, H., Cho, B.K., Ryoo, K.C., Park, S.O., Kim, H.S., U-In Chung Moon, J.T., Ryu, B.I.: Highly scalable on-axis confined cell structure for high density PRAM beyond 256mb. Symp. VLSI Tech Dig. 2005, 96-97 (2005)
4. Joseph, E.A., Happ, T. D., Chen, S.-H., Raoux, S., Chen, C.-F., Breitwisch, M., Schrott, A. G., Zaidi, S., Dasaka, R., Yee, B., Zhu, Y., Bergmann, R., Lung, H.-L., Lam, C.: Patterning of N:Ge2Sb2Te5 films and the characterization of etch induced modification for non-volatile phase change memory applications, in VLSI TSA. 2008.
5. Kim, R.-Y., Kim, H.-G., Yoon, S.-G.: Structural properties of Ge2Sb2Te5 thin film by metal organic chemical vapor deposition for phase change memory applications. Appl. Phys. Lett. 89, 102107 (2006)
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