Electrical and Mechanical Characteristics of Air-Bridge Cu Interconnects
Author:
Publisher
Springer New York
Link
http://link.springer.com/content/pdf/10.1007/978-0-387-95868-2_11.pdf
Reference18 articles.
1. ITRS 2004 Update: Interconnect.
2. Arnal, V. et al.: Integration of a 3 level Cu-SiO2 air gap interconnect for sub 0.1 micron CMOS technologies (Proc., IEEE IITC) 298 (2001)
3. Shieh, P. et al.: Electromigration reliability of low capacitance air-gap interconnect structures (Proc. IEEE IITC) 203 (2002)
4. Gabric, Z. et al.: Air gap technology by selective ozone/TEOS deposition (Proc. IEEE IITC) 151 (2004)
5. Noguchi, J. et al.: Simple self-aligned air-gap process with Cu/FSG structure (Proc., IEEE IITC) 68 (2003)
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1. Study of Via-Typed Air-Gap for Logic Devices Applications below 45 nm Node;Transactions on Electrical and Electronic Materials;2011-08-25
2. Controllable Ultra Low- k by Via-Typed Air Gap with the Better Design Margin for Logic Devices below 45 nm Node;Chinese Physics Letters;2010-09
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