Characterization of the stoichiometry of coevaporated FeSi x films by AES, EDX, RBS, and electron microscopy
Author:
Publisher
Springer Science and Business Media LLC
Subject
Biochemistry
Link
http://link.springer.com/content/pdf/10.1007/s002160050418.pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Three-step growth of highly photoresponsive BaSi2 light absorbing layers with uniform Ba to Si atomic ratios;Journal of Applied Physics;2019-12-07
2. MBE growth of β-FeSi2 epitaxial film on hydrogen terminated Si (111) substrate;Journal of Crystal Growth;2005-11
3. Conduction type and defect levels of β-FeSi2 films grown by MBE with different Si/Fe ratios;Materials Science in Semiconductor Processing;2003-10
4. Optical investigations of β-FeSi2 with and without Cr addition;Journal of Applied Physics;2001-11-15
5. Composition analysis of Co doped FeSix films by combining standard and heavy-ion RBS;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03
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