Single Crystal Growth
Author:
Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4419-1056-1_1.pdf
Reference23 articles.
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2. Cheung, J.T., “Role of atomic tellurium in the growth kinetics of CdTe (111) homoepitaxy,” Applied Physics Letters 51(23), pp. 1940-1942, 1987.
3. Elliot, A.G., Flat, A., and Vanderwater, D.A., “Silicon incorporation in LEC growth of single crystal gallium arsenide,” Journal of Crystal Growth 121(3), pp. 349-359, 1992.
4. Gao, Y.Z., Kan, H., Gao, F.S., Gong, X.Y., and Yamaguchi, T., “Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats,” Journal of Crystal Growth 234(1), pp. 85-90, 2002.
5. Gao, Y.Z., Gong, X.Y., Gui, Y.S., Yamaguchi, T., and Dai, N., “Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96 Layers with Cutoff Wavelength of 12 μm,” Japanese Journal of Applied Physics 43(3), pp. 1051, 2004.
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