Integral Diode
Author:
Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4419-5917-1_8.pdf
Reference12 articles.
1. B.J. Baliga and J.P Walden, “Improving the Reverse Recovery of Power MOSFET Integral Diodes by Electron Irradiation”, Solid State Electronics, Vol. 26, pp. 1133–1141, 1983.
2. K. Shenai and B.J. Baliga, “Monolithically Integrated Power MOSFET and Schottky Diode with Improved Reverse Recovery Characteristics”, IEEE Transactions on Electron Devices, Vol. 37, pp. 1167–1169, 1990.
3. B.J. Baliga and D.A. Girdhar, “Paradigm Shift in Planar Power MOSFET Technology”, Power Electronics Technology, pp. 24–32, November 2003.
4. D. Calafut, “Trench Power MOSFET Low-side Switch with Optimized Integrated Schottky Diode”, IEEE International Symposium on Power Semiconductor Devices, Paper 7.2, pp. 397–400, 2004.
5. S. Ono et al. “High Density MOSBD (UMOS with Built-in Trench Schottky Barrier Diode) for Synchronous Buck Converters”, IEEE International Symposium on Power Semiconductor Devices, Paper 6.1, pp. 77–80, 2006.
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