Quantum and Coulomb Effects in Nano Devices-Reference-Cited by-同舟云学术

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Quantum and Coulomb Effects in Nano Devices

Published:2011 Issue: Volume: Page:97-181
ISSN:
Container-title:Nano-Electronic Devices
language:
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Author:

Vasileska Dragica,Khan Hasanur Rahman,Ahmed Shaikh Shahid,Kannan Gokula,Ringhofer Christian

Publisher

Springer New York

Link

http://link.springer.com/content/pdf/10.1007/978-1-4419-8840-9_2.pdf

Reference111 articles.

1. W. Hansch, Th. Vogelsang, R. Kirchner and M. Orlowski., “Carrier Transport Near the Si/SiO2 Interface of a MOSFET”, Solid State Elec., vol 32, no. 10, pp. 839–849, Oct. 1989.

2. M.J. Van Dort, PH. Woerlee and AJ. Walker, “A Simple Model for Quantization Effects in Heavily-Doped Silicon MOSFETs at Inversion Conditions.”, Solid State Elec., vol. 37, no. 3, pp. 411–415, Mar. 1994.

3. F. F. Fang and W. E. Howard, “Negative Field-Effect Mobility on (100) Si Surfaces”, Phys. Rev. Lett., vol. 16, no. 18, pp. 797–799, May. 1966.

4. B. Winstead and U. Ravaioli, “Simulation of Schottky barrier MOSFET’s with a coupled quantum injection/Monte Carlo technique,” IEEE Trans. Electron Devices, vol. 47, no. 6, pp. 1241–1246, Jun. 2000.

5. R. W. Keyes, “The effect of randomness in the distribution of impurity atoms on FET thresholds,” Appl. Phys., vol. 8, no. 3, pp. 251–259, Jun. 1975.

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