Nonstoichiometry and nonradiative recombination in GaP-Reference-Cited by-同舟云学术

Nonstoichiometry and nonradiative recombination in GaP

Published:1975-10 Issue:5 Volume:4 Page:1159-1169
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Van Vechten J. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02660194.pdf

Reference23 articles.

1. J. I. Pankove,Optical Processes in Semiconductors (Prentice-Hall, Englewood Cliffs, 1971) pp. 160–169.

2. A. G. Milnes,Deep Impurities in Semiconductors (Wiley-Interscience, New York, 1973) especially pp. 287–297.

3. R. N. Bhargava, Philips Tech. Rev.32, 261 (1971); A. A. Bergh and P. J. Dean, Proc. IEEE60, 156 (1972); O. G. Lorimor, P. D. Dapkus, and W. H. Hackett, J. Electrochem. Soc.122, 407 (1975).

4. E. Pinkas, B. I. Miller, I. Hayashi and P. W. Foy, J. Appl. Phys.43, 827 (1972).

5. D. V. Lang and R. A. Logan, this conference; C. H. Henry, this conference.

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