Aspect ratio of radiation-hardened MOS transistors-Reference-Cited by-同舟云学术

Aspect ratio of radiation-hardened MOS transistors

Published:2018-01-17 Issue:1 Volume:135 Page:61-68
ISSN:0932-383X
Container-title:e & i Elektrotechnik und Informationstechnik
language:en
Short-container-title:Elektrotech. Inftech.

Author:

Bezhenova Varvara,Michalowska-Forsyth Alicja

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering

Link

http://link.springer.com/article/10.1007/s00502-017-0575-2/fulltext.html

Reference16 articles.

1. Barnaby, H. (2006): Total-ionizing-dose effects in modern CMOS technologies. IEEE Trans. Nucl. Sci., 53(6), 3103–3121.

2. Bezhenova, V., Michalowska-Forsyth, A. (2016): Total ionizing dose effects on MOS transistors fabricated in 0.18 um CMOS technology. In 2016 Asia Pacific international symposium on electromagnetic compatibility (APEMC), Shenzhen, China.

3. Li, T., Yang, Y., Liu, T. (2016): Total ionizing dose response of 0.18 um narrow channel I/O nMOSFETS. In 13th IEEE international conference on solid-state and Integrated Circuit Technology (ICSICT), Hangzhou, China.

4. Hughes, R. C., EerNisse, E. P., Stein, H. J. (1975): Hole transport in MOS oxides. IEEE Trans. Nucl. Sci., 22, 2227–2233.

5. Holmes-Siedle, A., Adams, L. (2007): Handbook of radiation effects. London: Oxford University Press.

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