Author:
Jain F. C.,Islam S. K.,Gokhale M.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation
Reference6 articles.
1. A. Antreasyan, P.A. Garbinski, V.D. Mattera,Jr, M.D. Feuer, H. Temkin and J. Filipe, ?High-Speed Enhancement-Mode InP MISFETs Grown by Chloride Vapor-Phase Epitaxy,? IEEE Transactions on Electron Devices, Vol. 36, No 2, pp. 256?262, 1989.
2. F. Jain, X. Bao, E. Donkor and K. Kalonia, ?A Three-Region Model for InP MISFETs Operating in the Milimeter Wave Regime?, Proc. of 15th Ir&MMW Conf., pp. 85?87, December, 1991, Orlando, FL.
3. F. Jain, S. Islam, M. Gokhale and C. Chung, ?Self-Aligned Heterostructure MOSFETs Using Modulation-Doped Strained Layers of Si-SiGe on Si Substrates?, Am. Phys. Soc., March 1991 Meeting, Cincinnati, OH.
4. P.W. Schwartz and J.C. Strum, ?Microsecond Carrier Lifetimes in Strained Silicon Germanium Alloys Grown by Rapid Thermal Chemical Vapor Deposition,? Appl. Phys. Lett. 57, pp. 2004?2006, November, 1990.
5. C.S. Chang and H.R. Fetterman, ?An Analytic Model for High-Electron Mobility Transistors?, Solid State Electronics Vol. 30, No. 5, pp. 485?491, 1987.