Infrared photoemission of holes from ultrathin (3?20 nm) Pt/Ir-compound silicide films into silicon-Reference-Cited by-同舟云学术

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Infrared photoemission of holes from ultrathin (3?20 nm) Pt/Ir-compound silicide films into silicon

Published:1992-08 Issue:2 Volume:55 Page:180-191
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Czernik A.,Palm H.,Cabanski W.,Schulz M.,Suckow U.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00334221.pdf

Reference34 articles.

1. N. Yutani, H. Kimata, H. Yagi, J. Nakanishi, S. Nagayashi, N. Tsubouchi: Int'l Electron Devices Meeting IEDM, Washington, DC, paper 7.3 (1991)

2. W.F. Kosonocky, F.V. Shallcross, T.S. Villani, J.V. Groppe: IEEE Trans. Ed-32, 1564 (1985)

3. H. Elabd, W.F. Kosonocky: RCA Rev. 43, 569 (1982)

4. B.Y. Tsaur, M.M. Weeks, R. Trubiano, P.W. Pellegrini, T.R. Yew: IEEE Trans. ED-32, 1564 (1988)

5. B.Y. Tsaur, C.K. Chen, B.S. Nechay: IEEE EDL-11, 415 (1990)

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