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Springer International Publishing
Reference123 articles.
1. Robertson, J.: High dielectric constant gate oxides for metal oxide Si transistors. Rep. Prog. Phys. 69, 327–396 (2006)
2. Chang, J.P., Lin, Y.-S.: Dielectric property and conduction mechanism of ultrathin zirconium oxide films. Appl. Phys. Lett. 79, 3666–3668 (2001)
3. Roy, B.K., Zhang, G., Cho, J., Magnuson, R., Poliks, M.: High-k ceramic thin films for embedded capacitors. In: Proceedings of the US-Korea Conference on Science, Technology, and Entrepreneurship (UKC 2008). San Diego, CA (2008)
4. Martinez, A.I., Acosta, D.R.: Effect of fluorine content on the structural and electrical properties of SnO2 and ZnO-SnO2 thin films prepared by spray pyrolysis. Thin Solid Films 483, 107–113 (2005)
5. Zhou, L., Hoffmann, R.C., Zhao, Z., Bill, J., Aldinger, F.: Chemical bath deposition of thin TiO2-anatase films for dielectric applications. Thin Solid Films 516, 7661–7666 (2008)