Monte Carlo Simulation of Electron-Electron Interactions in Bulk Silicon
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-030-44101-2_12
Reference8 articles.
1. Baccarani, G., Wordeman, M.R.: An investigation of steady-state velocity overshoot in silicon. Solid State Electron. 28(4), 407–416 (1985)
2. Childs, P.A., Leung, C.C.C.: A one-dimensional solution of the Boltzmann transport equation including electron-electron interactions. J. Appl. Phys. 79, 222 (1996)
3. Jacoboni, C., Lugli, P.: The Monte Carlo Method for Semiconductor Device Simulation. Springer, Wien (1989)
4. Kosina, H., Nedjalkov, M., Selberherr, S.: Theory of the Monte Carlo method for semiconductor device simulation. IEEE Trans. Electron Devices 47(10), 1898–1908 (2000)
5. Rauch, S.E., La Rosa, G., Guarin, F.J.: Role of e-e scattering in the enhancement of channel hot carrier degradation of deep-submicron NMOSFETs at high VGS conditions. IEEE Trans. Device Mater. Reliab. 1(2), 113–119 (2001)
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