Low-Noise Amplifiers in Gallium Nitride for Robust and Highly Linear Ka-Band SATCOM
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Springer Nature Switzerland
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https://link.springer.com/content/pdf/10.1007/978-3-031-26066-7_13
Reference9 articles.
1. Colangeli, S., et al.: Linear characterization and modeling of GaN-on-Si HEMT technologies with 100 nm and 60 nm gate lengths. Electron 10, 1–16 (2021). https://doi.org/10.3390/electronics10020134
2. Suijker, E.M., et al.: Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications. In: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. pp. 1–4. IEEE (2009). https://doi.org/10.1109/csics.2009.5315640
3. Longhi, P.E., Pace, L., Colangeli, S., Ciccognani, W., Limiti, E.: Novel design charts for optimum source degeneration trade-off in conjugately matched multistage low-noise amplifiers. IEEE Trans. Microw. Theory Tech. 69, 2531–2540 (2021). https://doi.org/10.1109/TMTT.2021.3068285
4. Florian, C., Traverso, P.A., Santarelli, A.: A Ka-Band MMIC LNA in GaN-on-Si 100-nm technology for high dynamic range radar receivers. IEEE Microw. Wirel. Components Lett. 31, 161–164 (2021). https://doi.org/10.1109/LMWC.2020.3047152
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1. Ka-Band High-Linearity and Low-Noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications;IEEE Access;2023
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