Switching Studies on Ge15Te70In5Ag10 Thin Films Device for Phase Change Memory Applications
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-030-23162-0_37
Reference18 articles.
1. Ovshinsky, S.R.: Symmetrical current controlling device. U.S. Patent 3 271 591,1966
2. Kim, S.B., Lee, B., Asheghi, M., Hurkx, G.A.M., Reifenberg, J.P., Goodson, K.E., Wong, H.-S.P.: Thermal disturbance and its impact on reliability of phase-change memory studied by micro-thermal stage. In: IEEE International Reliability Physics Symposium, Anaheim, CA, 2–6 May 2010
3. Ovshinsky, S.R.: Reversible electrical switching phenomena in disordered structures. Phys. Rev. Lett. 21, 1450–1453 (1968)
4. Das, C., Mahesha, M.G., Mohan Rao, G., Asokan, S.: Studies on electrical switching behavior and optical band gap of amorphous Ge–Te–Sn thin films. Appl. Phys. A 106, 989–994 (2012). https://doi.org/10.1007/s00339-011-6726-0
5. Wang, L., Tu L., Wen, J.: Application of phase-change materials in memory taxonomy, pp. 406–429. Received 15 Mar 2017, Accepted 16 May 2017, Accepted author version posted online: 22 May 2017, Published online: 13 June 2017
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