Studies on electrical switching behavior and optical band gap of amorphous Ge–Te

Studies on electrical switching behavior and optical band gap of amorphous Ge–Te–Sn thin films

Published:2011-12-31 Issue:4 Volume:106 Page:989-994
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Das Chandasree,Mahesha M. G.,Mohan Rao G.,Asokan S.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-011-6726-0.pdf

Reference50 articles.

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5. R. Bez, Recent development in phase change memory. Extended abstract of the SSDM, Tokyo, 2004

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