Author:
Alessandri Anna,D’Ercoli Filippo,Petruzza Pietro,Sciutti Alessandra
Publisher
Springer International Publishing
Reference23 articles.
1. Tachi, S., Tsujimoto, K., & Okudaira, S. (1988, February). Low-temperature reactive ion etching and microwave plasma etching of silicon. Applied Physics Letters, 52(8), 616–618.
2. Laermer, F., & Schilp, A. (1993). Method of anisotropically etching silicon. German Patent No DE4241045 (US Patent No 5501893, Mar. 26, 1996).
3. Blauw, M. A., et al. (2002). Advanced time-multiplexed plasma etching of high aspect ratio silicon structures. Journal of Vacuum Science and Technology B, 20, 3106–3110.
4. Rangelow, I. W. (2003). Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems. Journal of Vacuum Science and Technology A, 21, 1550–1562.
5. Chung, C. K., & Chiang, H. N. (2004). Inverse RIE lag of silicon deep etching. NSTI-Nanotech 2004, www.nsti.org, ISBN 0-9728422-7-6, Vol. 1.