1. Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle CG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, Graham S, Grotjohn TA, Heller ER, Higashiwaki M, Islam MS, Juodawlkis PW, Khan MA, Koehler AD, Leach JH, Mishra UK, Nemanich RJ, Pilawa-Podgurski RCN, Shealy JB, Sitar Z, Tadjer MJ, Witulski AF, Wraback M, Simmons JA (2018) Ultrawide-bandgap semiconductors: research opportunities and challenges. Adv Electron Mater 4:1600501
2. Isberg J, Hammersberg J, Johansson E, Wikström T, Twitchen DJ, Whitehead AJ, Coe SE, Scarsbrook GA (2002) High carrier mobility in single-crystal plasma-deposited diamond. Science 297:1670–1672
3. Akimoto I, Handa Y, Fukai K, Naka N (2014) High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance. Appl Phys Lett 105:032102
4. Wellmann PJ (2017) Power electronic semiconductor materials for automotive and energy saving applications – SiC, GaN, Ga2O3, and diamond. Z Anorg Allg Chem 643:1312–1322
5. Mildren RP (2013) Intrinsic optical properties of diamond. In: Mildren RP, Rabeau JR (eds) Optical engineering of diamond. Wiley, Weinheim, p 34