Impact of temperature on analog/RF, linearity and reliability performance metrics of tunnel FET with ultra-thin source region

Author:

Singh PrabhatORCID,Yadav Dharmendra Singh

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Study on linearity and harmonic distortion for a unique U-TFET in low-power analog/RF applications: The role of channel epilayer thickness;AEU - International Journal of Electronics and Communications;2023-08

2. Comprehensive Analysis of DG-TFET with Ferro Electric Material;2023 7th International Conference on Computing Methodologies and Communication (ICCMC);2023-02-23

3. Linearity and Harmonic Distortion Performance Assessment of Dual Material Stacked Gate Oxide Source Dielectric Pocket TFET;2022 11th International Conference on System Modeling & Advancement in Research Trends (SMART);2022-12-16

4. Impact of work function variation for enhanced electrostatic control with suppressed ambipolar behavior for dual gate L-TFET;Current Applied Physics;2022-12

5. Temperature dependence Performance Assessment of III-V / Si Heterojunction based Dual Material Stacked Gate Oxide TFET;2022 5th International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT);2022-11-26

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