Effect of grinding depths on SiC nanogrinding behavior based on molecular dynamics-Reference-Cited by-同舟云学术

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Effect of grinding depths on SiC nanogrinding behavior based on molecular dynamics

Published:2021-12-12 Issue:1 Volume:128 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Liu Yingli^ORCID,Ji Yanqiang,Dong Liguang,Xie Hongcai,Song Juncheng,Li Junye

Funder

national natural science foundation of china

jilin scientific and technological development program

changchun science and technology program

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

https://link.springer.com/content/pdf/10.1007/s00339-021-05169-2.pdf

Reference36 articles.

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2. D.C. Lim, H.G. Jee, J. Kim, J.S. Moon, S.B. Lee, S. Choi, J.H. Boo, Deposition of epitaxial silicon carbide films using high vacuum mocvd method for mems applications. Thin Solid Films 459(1), 7–12 (2004). https://doi.org/10.1016/j.tsf.2003.12.140. https://www.sciencedirect.com/science/article/pii/S0040609003020121. Proceedings of the 8th European Vacuum Congress Berlin 2003, 23-26 June 2003, featuring the 8th European Vacuum Conference and 2nd Annual Conference of the German Vaccum Society

3. Q.S. Yan, S.K. Chen, J.S. Pan, J.B. Lu, Q. Liu, Surface and subsurface damage characteristics and material removal mechanism in 6h-sic wafer grinding. Mater. Res. Innov. 18(sup2), S2–742–S2–747 (2014). https://doi.org/10.1179/1432891714Z.000000000522

4. J. Pan, X. Zhang, Q. Yan, S. Chen, Experimental study of surface performance of monocrystalline 6h-sic substrates in plane grinding with a metal-bonded diamond wheel. Int. J. Adv. Manuf. Technol. 89, 619–627 (2017) https://doi.org/10.1007/s00170-016-9095-1. https://link.springer.com/article/10.1007/s00170-016-9095-1. https://link.springer.com/article/10.1007%2Fs00170-016-9095-1#citeas

5. K. Yamaguchi, M. Touge, T. Nakano, J. Watanabe, in Advances in Abrasive Technology XII, Advanced Materials Research, vol. 76 (Trans Tech Publications Ltd, 2009), pp. 282–287. https://doi.org/10.4028/www.scientific.net/AMR.76-78.282

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