X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs $[\bar{1}\bar {1}\bar{1}]_{\mathrm{B}}$-Reference-Cited by-同舟云学术

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X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs $[\bar{1}\bar {1}\bar{1}]_{\mathrm{B}}$

Published:2009-07-04 Issue:4 Volume:96 Page:851-859
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Bauer Jens,Pietsch Ullrich,Davydok Anton,Biermanns Andreas,Grenzer Jörg,Gottschalch Volker,Wagner Gerald

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-009-5318-8.pdf

Reference24 articles.

1. C. Thelander, P. Agarwal, S. Brongersma, J. Eymery, L. Feiner, A. Forchel, M. Scheffler, W. Riess, B. Ohlsson, U. Gösele, L. Samuelson, Mater. Today 9, 28–35 (2006)

2. H.M. Kim, Y.H. Cho, H. Lee, S.I. Kim, S.R. Ryu, D.Y. Kim, T.W. Kang, K.S. Chung, Nano Lett. 4, 1059 (2004)

3. E. Givargizov, J. Cryst. Growth 31, 20–30 (1975)

4. M. Björk, B. Ohlsson, T. Sass, A. Persson, C. Thelander, M. Magnusson, K. Deppert, L. Wallenberg, L. Samuelson, Appl. Phys. Lett. 80, 1058–1160 (2001)

5. E. Ertekin, P. Greaney, D. Chrzan, T. Sands, J. Appl. Phys. 97, 114325 (2005)

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2. Catalyst–substrate interaction and growth delay in vapor–liquid–solid nanowire growth;Nanotechnology;2018-03-26

3. Impact of Rotational Twin Boundaries and Lattice Mismatch on III–V Nanowire Growth;ACS Nano;2017-09-13

4. Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B;Journal of Applied Crystallography;2013-06-07

5. Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy;Nanoscale Research Letters;2012-02-08

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