Investigation photoelectric characteristics of ZnO/p-Si heterojunction structure modification with PCBM
Author:
Funder
Selçuk University Research Foundation
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-022-05842-0.pdf
Reference67 articles.
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3. R. Balakarthikeyan, A. Santhanam, R. Anandhi, S. Vinoth, A.M. Al-Baradi, Z.A. Alrowaili, M.S. Al-Buriahi, K. Deva Arun Kumar, Fabrication of nanostructured NiO and NiO: Cu thin films for high-performance ultraviolet photodetector. Opt. Mater. Amst. 120, 111387 (2021). https://doi.org/10.1016/j.optmat.2021.111387
4. X. Zhou, L. Wang, X. Zhang, Y. Qiu, Direct and alternating electrical performance of TiO2/SiO2/p-Si heterojunction under visible illumination. Thin Solid Films 718, 138477 (2021). https://doi.org/10.1016/j.tsf.2020.138477
5. A. Das Mahapatra, D. Basak, Investigation on sub-band gap defects aided UV to NIR broad-band low-intensity photodetection by SnO2 thin film. Sens. Actuators, A Phys. 312, 112168 (2020). https://doi.org/10.1016/j.sna.2020.112168
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