Statistical analysis of current–voltage characteristics in Au/Ta2O5/n-GaN Schottky barrier heterojunction using different methods-Reference-Cited by-同舟云学术

Statistical analysis of current–voltage characteristics in Au/Ta2O5/n-GaN Schottky barrier heterojunction using different methods

Published:2021-01 Issue:1 Volume:127 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Manjunath V.,Nallabala Nanda Kumar Reddy,Yuvaraj C.,Kukkambakam Chandramohan,Kummara Venkata Krishnaiah,Kumar Suresh,Sharma Shivani,Lakshmaiah M. V.,Minnam Reddy Vasudeva Reddy

Funder

Science and Engineering Research Board

DST-FIST Program-2015

DST-SERB

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-020-04173-2.pdf

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4. Y. Chen, Z. Zhang, H. Jiang, Z. Li, G. Miao, H. Song, H. Liqin, T. Guo, Realization of an efficient electron source by ultraviolet-light-assisted field emission from a one-dimensional ZnO nanorods/n-GaN heterostructure photoconductive detector. Nanoscale. 11, 1351 (2019)

5. Q. Zheng, C. Li, A. Rai, J.H. Leach, D.A. Broido, D.G. Cahill, Thermal conductivity of GaN, GaN, and SiC from 150 K to 850 K. Phys. Rev. Mater. 3, 014601 (2019)

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