Author:
Goel Anubha,Rewari Sonam,Verma Seema,Gupta R. S.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Reference35 articles.
1. Semiconductor Industry Association, The National Technology Roadmap for Semiconductor Technology Needs (Sematech, Austin, 2019)
2. Y. Taur, T.H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, 1998)
3. T. Sekigawa, Y. Hayashi, Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate. Solid State Electron. 27, 827–828 (1984). https://doi.org/10.1016/0038-1101(84)90036-4
4. R.H. Yan, A. Ourmazd, K.F. Lee, Scaling the Si MOSFET: from bulk to SOI to bulk. IEEE Trans. Electron Devices 39, 1704–1710 (1992). https://doi.org/10.1109/16.141237
5. D. Frank, S.E. Laux, M.V. Fischetti, Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?, in IEDM Technical Digest, (1992), pp. 553–556. https://doi.org/10.1109/iedm.1992.307422
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