Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy-Reference-Cited by-同舟云学术

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Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy

Published:2004-09 Issue:4-6 Volume:79 Page:1517-1520
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Hiramatsu H.,Ueda K.,Takafuji K.,Ohta H.,Hirano M.,Kamiya T.,Hosono H.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-004-2836-2.pdf

Reference28 articles.

1. I. Akasaki, H. Amano: Jpn. J. Appl. Phys. 36, 5393 (1997)

2. H. Kawazoe, H. Yanagi, K. Ueda, H. Hosono: MRS. Bull. 25, 28 (2000)

3. K. Ueda, S. Inoue, S. Hirose, H. Kawazoe, H. Hosono: Appl. Phys. Lett. 77, 2701 (2000)

4. K. Ueda, H. Hosono: J. Appl. Phys. 91, 4768 (2002)

5. K. Ueda, K. Takafuji, H. Hiramatsu, H. Ohta, T. Kamiya, M. Hirano, H. Hosono: Chem. Mater. 15, 3692 (2003)

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