Electrical and Optical Properties and Electronic Structures of LnCuOS (Ln = La∼Nd)-Reference-Cited by-同舟云学术

Electrical and Optical Properties and Electronic Structures of LnCuOS (Ln = La∼Nd)

Published:2003-08-14 Issue:19 Volume:15 Page:3692-3695
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Ueda K.¹,Takafuji K.¹,Hiramatsu H.¹,Ohta H.¹,Kamiya T.¹,Hirano M.¹,Hosono H.¹

Affiliation:

1. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan, and Hosono Project, ERATO, JST, KSP C-1232, 3-2-1 Sakado, Takatsu, Kawasaki 213-0012, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm030175i

Reference13 articles.

1. Transparent p-type semiconductor: LaCuOS layered oxysulfide

2. Electrical and Optical Properties of Layered Oxysulfides with CuS Layers: Sr−Cu−M−O−S System (M = Zn, Ga, In)

3. Electronic Structure of Sr2Cu2ZnO2S2 Layered Oxysulfide with CuS Layers

4. Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS

5. Electronic structure of the transparentp-type semiconductor (LaO)CuS

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