Bias stress effect in low-voltage organic thin-film transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-008-5019-8.pdf
Reference29 articles.
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3. C. van Berkel, M.J. Powell, Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors. Appl. Phys. Lett. 51, 1094 (1987)
4. M.J. Powell, S.C. Deane, R.B. Wehrspohn, Microscopic mechanisms for creation and removal of metastable dangling bonds in hydrogenated amorphous silicon. Phys. Rev. B 66, 155212 (2002)
5. R. Libsch, J. Kanicki, Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors. Appl. Phys. Lett. 62, 1286 (1993)
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