Athermal annealing of Mg-implanted GaAs
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s00339-004-2995-1.pdf
Reference8 articles.
1. J. Grun, C.K. Manka, C.A. Hoffman, J.R. Meyer, O.J. Glembocki, R. Kaplan, S.B. Qadri, E.F. Skelton, D. Donnelly, B. Covington: Phys. Rev. Lett. 78, 1584 (1997)
2. D.W. Donnelly, B.C. Covington, J. Grun, C.A. Hofman, J.R. Meyer, C.K. Manka, O. Glembocki, S.B. Qadri, E.F. Skelton: Appl. Phys. Lett. 71, 680 (1997)
3. J. Grun, R.P. Fischer, M. Peckerar, C.L. Felix, B.C. Covington, W.J. DeSisto, D.W. Donnelly, A. Ting, C.K. Manka: Appl. Phys. Lett. 77, 1997 (2000)
4. D.W. Donnelly, B.C. Covington, J. Grun, R.P. Fischer, M. Peckerar, C.L. Felix: Appl. Phys. Lett. 78, 2000 (2001)
5. M.V. Rao, J. Brookshire, S. Mitra, S.B. Qadri, R. Fischer, J. Grun, N. Papanicolaou, M. Yousuf, M.C. Ridgway: J. Appl. Phys. 94, 130 (2003)
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