A new approach to modeling TiO2−x-based memristors using molecular dynamics simulation
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s00339-019-2602-0.pdf
Reference37 articles.
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3. S.H. Lee, Y. Jung, R. Agarwal, Highly scalable non-volatile and ultra-low power phase- change nanowire memory. Nat. Nanotechnol. 2, 626–630 (2007)
4. Z. Sun, J. Zhou, R. Ahuja, Unique melting behavior in phase-change materials for rewritable data storage. Phys. Rev. Lett. 98, 055505 (2007)
5. P.O. Vontobel, W. Robinett, P.J. Kuekes, D.R. Stewart, J. Straznicky, R.S. Williams, Writing to and reading from a nano-scale crossbar memory based on memristors. Nat. Nanotechnol. 20, 425204 (2009)
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