Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios-Reference-Cited by-同舟云学术

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Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

Published:2020-01 Issue:1 Volume:126 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Shih Chun-Hsing,Chien Nguyen Dang^ORCID,Tran Huy-Duy,Van Chuan Phan

Funder

Vietnam National Foundation for Science and Technology Development

Ministry of Education and Training of Vietnam

Dalat University

Ministry of Science and Technology of Taiwan

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-019-3246-9.pdf

Reference27 articles.

1. IEEE International Roadmap for Devices and Systems (IRDS) https://irds.ieee.org/ (2018)

2. J. Appenzeller, Y.-M. Lin, J. Knoch, Ph Avouris, Band-to-band tunneling in carbon nanotube field-effect transistors. Phys. Rev. Lett. 93, 196905 (2004)

3. W.Y. Choi, B.-G. Park, J.D. Lee, T.-J.K. Liu, Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett. 28, 743–745 (2007)

4. S.O. Koswatta, M.S. Lundstrom, D.E. Nikonov, Performance comparison between p-i-n tunneling transistors and conventional MOSFETs. IEEE Trans. Electron Devices 56, 456–465 (2009)

5. M.G. Bardon, H.P. Neves, R. Puers, C.V. Hoof, Pseudo-two-dimensional model for double-gate tunnel FETs considering the junctions depletion regions. IEEE Trans. Electron Devices 57, 827–834 (2010)

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