Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation-Reference-Cited by-同舟云学术

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Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation

Published:2017-05-27 Issue:6 Volume:123 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Igityan Arsen,Aghamalyan Natella,Petrosyan Silva,Gambaryan Irina,Badalyan Georgi,Hovsepyan Ruben,Kafadaryan Yevgenia

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/article/10.1007/s00339-017-1057-4/fulltext.html

Reference27 articles.

1. C.-H. Hsu, M.-T. Wang, J. Ya-Min Lee, Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric. J. Appl. Phys. 100, 074108 (2006)

2. K. Xiong, J. Robertson, Oxygen vacancies in high dielectric constant oxides La2O3, Lu2O3, and LaLuO3. Appl. Phys. Lett. 95, 022903 (2009)

3. L. Qi-Ya, F. Ze-Bo, J. Ting, L. Shi-Yan, T. Yong-Sheng, C. Jia-Jun, Z. Yan-Yan, Band alignment and band gap characterization of La2O3 films on Si substrates grown by radio frequency magnetron sputtering. Chin. Phys. Lett. 31, 027702 (2014)

4. Y. Wang, R. Jia, C. Li, Y. Zhang, Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures. AIP Adv. 5, 087166 (2015)

5. M. Gutowski, J.E. Jaffe, C.-L. Liu, M. Stoker, R.I. Hegde, R.S. Rai, P.J. Tobin, Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2. Appl. Phys. Lett. 80, 1897 (2002)

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3. Negative Differential Conductivity of Lanthanum-Oxide-Based Structures;Semiconductors;2020-02

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