Funder
Consejo Nacional de Ciencia y Tecnología
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Reference45 articles.
1. T. Kaga, H. Shinriki, F. Murai, Y. Kawamoto, Y. Nakagone, F. Takeda, K. Itoh, DRAM manufacturing in the ’90s -Part 3: a case study. Semicond. Int. 6, 98–101 (1991)
2. K.W. Kwon, C.S. Kang, S.O. Park, H.K. Kang, S.T. Ann, Thermally robust Ta2O5 capacitor for the 256-Mbit DRAM. IEEE Trans. Electron. Devices. 43, 919–923 (1996)
3. C. Chaneliere, J.L. Autran, R.A.B. Devine, B. Baland, Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications. Mater. Sci. Eng. R-rep 22, 269–322 (1998)
4. C. Chaneliere, S. Four, J.L. Autran, R.A.B. Devine, N.P. Sandler, Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC
$$_2$$
2
H
$$_5$$
5
)
$$_5$$
5
precursor. Electrochem. J. Appl. Phys. 83, 4823–4829 (1998)
5. R.H. Dennard, F.H. Gaensslen, H. Yu, V.L. Rideout, E. Bassous, A.R. LeBlanc, Design of ion-implanted MOSFET’s with very small physical dimensions. IEEE J. Solid-State Circ. 9, 256–268 (1974)
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