The basic I–V characteristics of memristor model: simulation and analysis
Author:
Funder
faten ouaja Rziga
khaoula mbarek
Sami Ghedira
kamel besbes
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s00339-017-0902-9.pdf
Reference43 articles.
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3. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature 453(7191), 80–83 (2008)
4. J.J. Yang, M.D. Pickett, X. Li, D.A. Ohlberg, D.R. Stewart, R.S. Williams, Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3(7), 429–433 (2008)
5. J.J. Yang, F. Miao, M.D. Pickett, D.A. Ohlberg, D.R. Stewart, C.N. Lau, R.S. Williams, The mechanism of electroforming of metal oxide memristive switches. Nanotechnology, 20(21), 215201 (2009)
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