In-plane charged domain walls with memristive behaviour in a ferroelectric film-Reference-Cited by-同舟云学术

In-plane charged domain walls with memristive behaviour in a ferroelectric film

Published:2023-01-18 Issue:7945 Volume:613 Page:656-661
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Liu Zhongran,Wang Han,Li Ming^ORCID,Tao Lingling^ORCID,Paudel Tula R.,Yu Hongyang,Wang Yuxuan,Hong Siyuan,Zhang Meng,Ren Zhaohui,Xie Yanwu^ORCID,Tsymbal Evgeny Y.^ORCID,Chen Jingsheng^ORCID,Zhang Ze^ORCID,Tian He^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

https://www.nature.com/articles/s41586-022-05503-5.pdf

Reference45 articles.

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2. Martin, L. W. & Rappe, A. M. Thin-film ferroelectric materials and their applications. Nat. Rev. Mater. 2, 1–14 (2016).

3. Sharma, P., Schoenherr, P. & Seidel, J. Functional ferroic domain walls for nanoelectronics. Materials 12, 2927 (2019).

4. Scott, J. F. Applications of modern ferroelectrics. Science 315, 954–959 (2007).

5. Meier, D. & Selbach, S. M. Ferroelectric domain walls for nanotechnology. Nat. Rev. Mater. 7, 157–173 (2021).

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