Measurement of boron and phosphorus concentration in silicon by low-temperature FTIR spectroscopy-Reference-Cited by-同舟云学术

Measurement of boron and phosphorus concentration in silicon by low-temperature FTIR spectroscopy

Published:2005-11 Issue:6 Volume:81 Page:1187-1190
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Porrini M.,Pretto M.G.,Scala R.,Batunina A.V.,Alt H.C.,Wolf R.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-004-3032-0.pdf

Reference9 articles.

1. ASTM F723-99, The 1999 Annual Book of ASTM Standards, American Society for Testing and Materials

2. ASTM F1630-99, The 1999 Annual Book of ASTM Standards, American Society for Testing and Materials

3. DIN 50438-3, Determination of impurity content in silicon by means of infra-red absorption, part 3: boron and phosphorus, DIN Deutsche Institut für Normung, Beuth Verlag GmbH, 10772 Berlin

4. H.C. Alt, M. Gellon, M.G. Pretto, R. Scala, F. Bittersberger, K. Hesse, A. Kempf: Characterization and Metrology for ULSI Technology: 1998 International Conference, D.G. Seiler, A.C. Diebold, W.M. Bullis, T.J. Shaffner, R. McDonald, E.J. Walters Eds. The American Institute of Physics, 1998 p. 201

5. ASTM F84-99, The 1999 Annual Book of ASTM Standards, American Society for Testing and Materials

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