Terahertz transient stimulated emission from doped silicon

Author:

Pavlov S. G.1ORCID,Deßmann N.2,Pohl A.3,Zhukavin R. Kh.4ORCID,Klaassen T. O.5,Abrosimov N. V.6ORCID,Riemann H.6,Redlich B.2,van der Meer A. F. G.2,Ortega J.-M.7,Prazeres R.7ORCID,Orlova E. E.8ORCID,Muraviev A. V.9,Shastin V. N.4,Hübers H.-W.13ORCID

Affiliation:

1. Institute of Optical Sensor Systems, German Aerospace Center (DLR), 12489 Berlin, Germany

2. FELIX Laboratory, Radboud University, 6525 ED Nijmegen, The Netherlands

3. Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany

4. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia

5. Faculty of Applied Sciences, Delft University of Technology, 2628 CN Delft, The Netherlands

6. Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany

7. CLIO/Université Paris-Saclay, CNRS, Institut de Chimie Physique, 91405 Orsay, France

8. Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT Leeds, United Kingdom

9. The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816, USA

Funder

Deutsche Forschungsgemeinschaft

Russian Foundation for Basic Research

European Commission

Publisher

AIP Publishing

Subject

Computer Networks and Communications,Atomic and Molecular Physics, and Optics

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