Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal-Reference-Cited by-同舟云学术

Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal

Published:2012-09-29 Issue:2 Volume:111 Page:671-674
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Klein B.,Montoya J.,Gautam N.,Krishna S.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-012-7293-8.pdf

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3. J.W. Little, S.P. Svensson, W.A. Beck, A.C. Goldberg, S.W. Kennerly, T. Hongsmatip, M. Winn, P. Uppal, J. Appl. Phys. 101, 044514 (2007)

4. P.Y. Delaunay, B.M. Nguyen, D. Hoffman, M. Razeghi, Appl. Phys. Lett. 91, 231106 (2007)

5. M. Walther, R. Rehm, J. Fleissner, J. Schmitz, Proc. SPIE 6542, 654206-1 (2007)

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