The shape of epitaxially grown silicon nanowires and the influence of line tension-Reference-Cited by-同舟云学术

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The shape of epitaxially grown silicon nanowires and the influence of line tension

Published:2005-02 Issue:3 Volume:80 Page:445-450
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Schmidt V.,Senz S.,Gösele U.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-004-3092-1.pdf

Reference9 articles.

1. E. Levy, Y. Xia, P. Yang: Adv. Mater., Spec. Issue ‘One-dimensional nanostructures’, 15, 341–468 (2003)

2. E.I. Givargizov: Highly Anisotropic Crystals (Reidel, Dordrecht 1987)

3. J.S. Rowlinson, B. Widom: Molecular Theory of Capillarity (Dover, Mineola, NY 2002)

4. B.A. Pethica: Rep. Prog. Appl. Chem. 46, 14 (1961)

5. B. Widom: J. Phys. Chem. 99, 2803 (1995)

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