Rapid fabrication and characterization of CuGaS2:Ti intermediate-band material by the solvothermal method-Reference-Cited by-同舟云学术

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Rapid fabrication and characterization of CuGaS2:Ti intermediate-band material by the solvothermal method

Published:2021-07-16 Issue:8 Volume:127 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Yang Yingying,Du Yanan,Zhang Siyao,Wang Yanlai,Wang Ligang^ORCID

Funder

the Scientific Research Program for Higher Schools of Inner Mongolia

the Natural Science Foundation of Inner Mongolia

the National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

https://link.springer.com/content/pdf/10.1007/s00339-021-04738-9.pdf

Reference20 articles.

1. A. Luque, A. Martí, The intermediate band solar cell: progress toward the realization of an attractive concept. Adv. Mater 22, 160–174 (2010)

2. W. Shockley, H.J. Queisser, Detailed balance limit of efficiency of p-n junction solar cells. J. Appl. Phys. 32, 510–519 (1961)

3. B. Tell, J.L. Shay, H.M. Kasper, Room-temperature electrical properties of ten I-III-VI2 semiconductors. J. Appl. Phys. 43, 2469–2470 (1972)

4. A. Martí, D.F. Marrón, A. Luque, Evaluation of the efficiency potential of intermediate band solar cells based on thin-film chalcopyrite materials. J. Appl. Phys. 103, 073706–073711 (2008)

5. P. Palacios, K. Sánchez, J.C. Conesa, P. wahnón, First principles calculation of isolated intermediate bands formation in a transition metal-doped chalcopyrite-type semiconductor. Phys. Status Solidi (a) 203, 1395–1401 (2006)

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