Molecular dynamics simulations of silicon wafer bonding-Reference-Cited by-同舟云学术

Molecular dynamics simulations of silicon wafer bonding

Published:1996-01 Issue:1 Volume:62 Page:7-12
ISSN:0947-8396
Container-title:Applied Physics A Materials Science & Processing
language:en
Short-container-title:Appl. Phys. A

Author:

Conrad D.,Scheerschmidt K.,Gösele U.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF01568080.pdf

Reference29 articles.

1. H. Baumgart, C. Hunt, M. Schmidt, T. Abe (eds.):Proc. 2nd Int'l Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications II (Electrochem. Soc., Pennington, NJ 1993)

2. C. Hunt, H. Baumgart, S. Iyer, U. Gösele, T. Abe (eds.):Proc. 3rd Int'l Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications (Electrochem. Soc., Pennington, NJ 1995)

3. S. Bengtsson: J. Electron. Mater.21, 669 (1992)

4. Q.-Y. Tong, U. Gösele: Mater. Chem. Phys.37, 101 (1994)

5. K. Ljungberg, A. Söderbärg, Y. Bäcklund: Appl. Phys. Lett.62, 1362 (1993)

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Record Low Thermal Conductivity of Polycrystalline Si Nanowire: Breaking the Casimir Limit by Severe Suppression of Propagons;Nano Letters;2016-09-07

2. Direct Wafer Bonding;Handbook of Wafer Bonding;2012-02-08

3. Surface activation-based nanobonding and interconnection at room temperature;Journal of Micromechanics and Microengineering;2011-01-11

4. Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C;Thin Solid Films;2010-11

5. Molecular simulation on interfacial structure and gettering efficiency of direct silicon bonded (110)/(100) substrates;Journal of Applied Physics;2010-06