基于KH550固态电解质的低压氧化铟锌薄膜晶体管
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
https://link.springer.com/content/pdf/10.1007/s12204-022-2421-x.pdf
Reference30 articles.
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3. NOMURA K, OHTA H, TAKAGI A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J]. Nature, 2004, 432(7016): 488–492.
4. FORTUNATO E, BARQUINHA P, MARTINS R. Oxide semiconductor thin-film transistors: A review of recent advances [J]. Advanced Materials, 2012, 24(22): 2945–2986.
5. JIANG J, WAN Q, SUN J, et al. Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature [J]. Applied Physics Letters, 2009, 95(15): 152114.
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