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Dependence of glow discharge Si:H:Cl film morphology on diluent gas and SiCl4 partial pressure

  • Published:1988-11 Issue:3 Volume:47 Page:301-307
  • ISSN:0721-7250
  • Container-title:Applied Physics A Solids and Surfaces
  • language:en
  • Short-container-title:Appl. Phys. A

Author:

Danesh P.,Kalitzova M.,Pantchev B.,Simov S.,Blasi C.,Vitali G.,Rossi M.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of keV ion irradiation on mechanical properties of hydrogenated amorphous silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-09

2. The relationship between the film properties and the preparation conditions for a-Si:H grown by homogeneous chemical vapour deposition;Semiconductor Science and Technology;1994-12-01

3. a-Si:H thin film microstructure influenced by HOMOCVD-process parameters;Solar Energy Materials and Solar Cells;1993-11

4. Short‐range order and microstructure in hydrogenated amorphous silicon;Journal of Applied Physics;1991-06

5. Bias-enhanced conductance in hydrogenated amorphous silicon films;Philosophical Magazine B;1991-05
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