Investigation on material selection for gate dielectric in nanocrystalline silicon (nc-Si) top-gated thin film transistor (TFT) using Ashby’s, VIKOR and TOPSIS

Author:

Sharma Prachi,Gupta Navneet

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

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