The properties of AlGaN films and AlGaN/GaN heterostructures grown on ( $$11\bar{2}0$$ ) sapphire substrates-Reference-Cited by-同舟云学术

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The properties of AlGaN films and AlGaN/GaN heterostructures grown on ( $$11\bar{2}0$$ ) sapphire substrates

Published:2006-10 Issue:10 Volume:17 Page:847-850
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Liao Wei-Tsai,Gong Jyh-Rong,Lin Shih-Wei,Wang Cheng-Liang,Chen Keh-Chang,Shi Jen-Bin,Chang Sheng-Yueh,Lin Kuan-Jiuh

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10854-006-0033-0.pdf

Reference14 articles.

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Appl. Phys. Lett. 67, 1868 (1995)

2. Y. Narukawa, I. Niki, K. Izuno, M. Yamada, Y. Murazaki, T. Mukai, Jpn. J. Appl. Phys. 41, L371 (2002)

3. Y.B. Lee, T. Wang, Y.H. Liu, J.P. Ao, H.D. Li, H. Sato, K. Nishino, Y. Naoi, S. Sakai, Jpn. J. Appl. Phys. 41, L1037 (2002)

4. Y.F. Wu, D. Kapolnek, J.P. Ibbetson, P. Parikh, B.P. Keller, U.K. Mishra, IEEE Trans. Electron. 48, 586 (2001)

5. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sheet carrier density enhancement by Si3N4 passivation on nonpolar a-plane (112¯0) sapphire grown AlGaN∕GaN heterostructures;Applied Physics Letters;2008-03-03

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