Abstract
AbstractPolycrystalline samples of (Bi1-xInx)2Se2.7Te0.3 (x = 0.00, 0.02, and 0.04) were prepared by the solid-state reaction technique. X-ray diffraction pattern confirms that the polycrystalline samples have a hexagonal structure with spacegroup R$$\stackrel{-}{3}$$
3
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m. The surface morphologic study reveals the existence of porous behavior in the studied samples due to the volatilization of Selenium. Energy dispersive X-ray analysis validates the expected and observed elemental composition of the samples. Electrical resistivity has shown metallic behavior. Hall effect and Seebeck coefficient measurements indicate the p-type and n-type conduction for the pristine sample Bi2Se3 and the (Bi1-xInx)2Se2.7Te0.3 samples, respectively. The thermal conductivity and electrical resistivity were found to reduce by 7.5 and 9 times, respectively, for (Bi0.96In0.04)2Se2.7Te0.3 compared to the pristine sample Bi2Se3.
Funder
Manipal Academy of Higher Education, Manipal
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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