Author:
Kim Do-Heyoung,Kim Byung-Yup
Publisher
Springer Science and Business Media LLC
Subject
General Chemical Engineering,General Chemistry
Reference17 articles.
1. Amazawa, T., “Selective Chemical Vapor Deposition of Smooth Aluminum Films from Highly Supersaturated Source Gas,”J. Electrochem. Soc.,146, 4111 (1999).
2. Gladfelter, W. L., Boyd, D. C. and Jensen, K. F., “Trimethylamine Complexes of Alane as Precursors for the Low Pressure Chemical Vapor Deposition of Aluminum,”Chem. Mater.,1, 339(1989).
3. Green, M. L. and Gallagher, P.K., “LPCVD Aluminum for VLSI Processing,”J. Electrochem. Soc.,131, 2175 (1984).
4. Gross, M. E., Fleming, C. G., Cheung, K. P. and Heimbrook, L. A., “Liquid Source Metalorganic Chemical Vapor Deposition of Aluminum using Triethylamine Alane,”Appl. Phys. Lett.,69, 2589 (1991).
5. Jang, J.W., Rhee, H. S. and Ahn, B. T., “Hydrogen Plasma Pretreatment Effect on the Deposition of Aluminum Thin Films from Metalorganic Chemical Vapor Deposition using Dimethylethylamine Alane,”J. Vac. Sci. Technol.,A17, 1031 (1999).
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献