UV Total Dose Nonvolatile Sensor Using Silicon–Oxide–Nitride–Oxide–Silicon Capacitor with Oxy-nitride as Charge-trapping Layer-Reference-Cited by-同舟云学术

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UV Total Dose Nonvolatile Sensor Using Silicon–Oxide–Nitride–Oxide–Silicon Capacitor with Oxy-nitride as Charge-trapping Layer

Published:2018-08-31 Issue:8 Volume:30 Page:1831
ISSN:0914-4935
Container-title:Sensors and Materials
language:en
Short-container-title:

Author:

Jong Fuh-Cheng,Hsieh Wen-Ching,Lee Hao-Tien Daniel,Wu Shich-Chuan

Publisher

MYU K.K.

Subject

General Materials Science,Instrumentation

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Comparison of SONOS-Type UV TD Sensor Using Indium Tin Oxide-Aluminum Oxide-Zirconia Aluminum Oxide-Silicon Oxide-Silicon and Indium Tin Oxide-Aluminum Oxide-Hafnium Aluminum Oxide-Silicon Oxide-Silicon;Crystals;2023-07-13

2. Improve the Performance of SONOS Type UV TD Sensors Using IOHAOS with Enhanced UV Transparency ITO Gate;Coatings;2021-04-01

3. Performance Improvement of SAONOS Device as UV-total-dose Nonvolatile Sensor with Al2O3/SiO2 Bilayer Blocking Oxide;Sensors and Materials;2020-07-10

4. Performance Improvement of a Nonvolatile UV TD Sensor Using SAHAOS with a High Temperature Annealed, Partially Nano-Crystallized Trapping Layer;Sensors;2019-04-01

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